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 Power Transistors
2SC4892
Silicon NPN triple diffusion planar type
Unit: mm
4.20.2
For power switching I Features
* High-speed switching * High collector to base voltage VCBO * Satisfactory linearity of forward current transfer ratio hFE * Allowing supply with the radial taping
10.00.2 1.00.2
5.00.1
13.00.2
2.50.1
1.20.1 1.480.2
90
C 1.0 2.250.2
18.00.5 Solder Dip
0.650.1 0.650.1 0.350.1 1.050.1 0.550.1 0.550.1
I Absolute Maximum Ratings TC = 25C
Parameter Collector to base voltage Collector to emitter voltage Symbol VCBO VCES VCEO Emitter to base voltage Peak collector current Collector current Base current Collector power dissipation TC = 25C Ta = 25C Tj Tstg VEBO ICP IC IB PC Rating 900 900 800 7 2 1 0.3 15 2 150 -55 to +150 C C Unit V
2.50.2
2.50.2 123
V V V A A A W
1 : Base 2 : Collector 3 : Emitter MT-4 (MT4 Type Package)
Junction temperature Storage temperature
I Electrical Characteristics TC = 25C
Parameter Collector cutoff current Emitter cutoff current Collector to emitter voltage Forward current transfer ratio Symbol ICBO IEBO VCEO hFE1 hFE2 Collector to emitter saturation voltage Base to emitter saturation voltage Transition frequency Turn-on time Storage time Fall time VCE(sat) VBE(sat) fT ton tstg tf Conditions VCB = 900 V, IE = 0 VEB = 7 V, IC = 0 IC = 1 mA, IB = 0 VCE = 5 V, IC = 0.05 A VCE = 5 V, IC = 0.5 A IC = 0.2 A, IB = 0.04 A IC = 0.2 A, IB = 0.04 A VCE = 10 V, IC = 0.05 A, f = 1 MHz IC = 0.2 A, IB1 = 0.04 A, IB2 = - 0.08 A, VCC = 250 V 4 1 3 1 800 6 3 1.5 1 V V MHz s s s Min Typ Max 50 50 Unit A A V
1
2SC4892
PC T a
20 1.2 (1) TC=Ta (2) Without heat sink (PC=2.0W) 15 TC=25C IB=200mA 1.0
Power Transistors
IC VCE
Collector to emitter saturation voltage VCE(sat) (V)
3 IC/IB=5
VCE(sat) IC
TC=100C 25C 1
Collector power dissipation PC (W)
Collector current IC (A)
(1)
0.8
10
0.6
0.4
100mA 90mA 80mA 70mA 60mA 50mA 40mA 30mA 20mA
0.3
-25C
0.1
5
0.2 (2) 0 0 20 40 60 80 100 120 140 160 0 0 2 4 6 8 10 12 10mA
0.03
0.01 0.01
0.03
0.1
0.3
1
Ambient temperature Ta (C)
Collector to emitter voltage VCE (V)
Collector current IC (A)
VBE(sat) IC
Base to emitter saturation voltage VBE(sat) (V)
3 25C 1 TC=-25C 100C 0.3 IC/IB=5 100
hFE IC
1000 VCE=5V
fT I C
VCE=10V f=1MHz TC=25C
Forward current transfer ratio hFE
30
25C TC=100C
Transition frequency fT (MHz)
0.3 1 3
300 100 30 10 3 1 0.3 0.1 0.001 0.003
10 -25C 3
0.1
1
0.03
0.3
0.01 0.01
0.03
0.1
0.3
1
0.1 0.01
0.03
0.1
0.01 0.03
0.1
0.3
1
Collector current IC (A)
Collector current IC (A)
Collector current IC (A)
ton, tstg, tf IC
100 30 Pulsed tw=1ms Duty cycle=1% IC/IB=5 (2IB1=-IB2) VCC=250V TC=25C 10 3
Area of safe operation (ASO)
Non repetitive pulse TC=25C ICP IC
t=1ms
Switching time ton,tstg,tf (s)
10 3 1 0.3 0.1 0.03 0.01 0 0.2 0.4
Collector current IC (A)
1 0.3 0.1 0.03 0.01 0.003 0.001
tstg
10ms
DC
ton tf
0.6
0.8
1.0
1
3
10
30
100
300
1000
Collector current IC (A)
Collector to emitter voltage VCE (V)
2
Power Transistors
Rth(t) t
10000 Note: Rth was measured at Ta=25C and under natural convection. (1) Without heat sink (2) With a 50 x 50 x 2mm Al heat sink
2SC4892
Thermal resistance Rth(t) (C/W)
1000
100
(1) (2)
10
1
0.1 10-4
10-3
10-2
10-1
1
10
102
103
104
Time t (s)
3
Request for your special attention and precautions in using the technical information and semiconductors described in this material
(1) An export permit needs to be obtained from the competent authorities of the Japanese Government if any of the products or technologies described in this material and controlled under the "Foreign Exchange and Foreign Trade Law" is to be exported or taken out of Japan. (2) The technical information described in this material is limited to showing representative characteristics and applied circuit examples of the products. It does not constitute the warranting of industrial property, the granting of relative rights, or the granting of any license. (3) The products described in this material are intended to be used for standard applications or general electronic equipment (such as office equipment, communications equipment, measuring instruments and household appliances). Consult our sales staff in advance for information on the following applications: * Special applications (such as for airplanes, aerospace, automobiles, traffic control equipment, combustion equipment, life support systems and safety devices) in which exceptional quality and reliability are required, or if the failure or malfunction of the products may directly jeopardize life or harm the human body. * Any applications other than the standard applications intended. (4) The products and product specifications described in this material are subject to change without notice for reasons of modification and/or improvement. At the final stage of your design, purchasing, or use of the products, therefore, ask for the most up-to-date Product Standards in advance to make sure that the latest specifications satisfy your requirements. (5) When designing your equipment, comply with the guaranteed values, in particular those of maximum rating, the range of operating power supply voltage and heat radiation characteristics. Otherwise, we will not be liable for any defect which may arise later in your equipment. Even when the products are used within the guaranteed values, redundant design is recommended, so that such equipment may not violate relevant laws or regulations because of the function of our products. (6) When using products for which dry packing is required, observe the conditions (including shelf life and after-unpacking standby time) agreed upon when specification sheets are individually exchanged. (7) No part of this material may be reprinted or reproduced by any means without written permission from our company.
Please read the following notes before using the datasheets
A. These materials are intended as a reference to assist customers with the selection of Panasonic semiconductor products best suited to their applications. Due to modification or other reasons, any information contained in this material, such as available product types, technical data, and so on, is subject to change without notice. Customers are advised to contact our semiconductor sales office and obtain the latest information before starting precise technical research and/or purchasing activities. B. Panasonic is endeavoring to continually improve the quality and reliability of these materials but there is always the possibility that further rectifications will be required in the future. Therefore, Panasonic will not assume any liability for any damages arising from any errors etc. that may appear in this material. C. These materials are solely intended for a customer's individual use. Therefore, without the prior written approval of Panasonic, any other use such as reproducing, selling, or distributing this material to a third party, via the Internet or in any other way, is prohibited.
2001 MAR


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